型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
TMCS1133 | TMCS1133 Precision 1 MHz Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 75 ARMS • Robust reinforced isolation – Withstand isolation voltage: 5000 VRMS – Reinforced working voltage: 1100 VDC • High accuracy – Sensitivity error: ± 0.3 – Sensitivity drift: ± 20 ppm/°C – Offset error: ± 1 mV – Offset drift: ± 20 μV 文件:2.25784 Mbytes 页数:36 Pages | TI 德州仪器 | TI | |
TMCS1133 | TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.756 Mbytes 页数:40 Pages | TI 德州仪器 | TI | |
TMCS1133 | TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72932 Mbytes 页数:41 Pages | TI 德州仪器 | TI | |
TMCS1133 | TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72987 Mbytes 页数:41 Pages | TI 德州仪器 | TI | |
TMCS1133 | TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – S 文件:3.27692 Mbytes 页数:44 Pages | TI 德州仪器 | TI | |
TMCS1133 | 具有 AFR、ALERT 的 ±1100V 增强型隔离 75Arms 1MHz 霍尔效应电流传感器 TMCS1133 是一款电隔离霍尔效应电流传感器,具有业界出色的隔离功能和精度。该器件还提供与输入电流成正比的输出电压,且在所有灵敏度选项下均具有出色的线性度和低漂移。具有内置漂移补偿功能的精密信号调节电路能够在没有系统级校准的情况下,在温度和寿命范围内的最大总误差小于 2.5%,或在一次性室温校准(同时包括寿命和温度漂移)的情况下的最大总误差小于 1.5%。\n\n交流或直流输入电流流经内部导体,所产生的磁场可由集成式片上霍尔效应传感器进行测量。无磁芯结构消除了对磁集中器的需求。差分霍尔传感器可抑制外部杂散磁场产生的干扰。低导体电阻将可测量电流范围提高至 ±96A,同时更大程 高持续电流能力:75 A RMS\n \n可靠的增强型隔离 \n \n可承受的隔离电压:5000V RMS\n \n增强型工作电压:1100V DC\n \n\n \n高精度 \n \n灵敏度误差: ±0.3%\n \n灵敏度漂移: ±20ppm/°C\n \n失调电压误差: ±1mV\n \n温漂 ±20µV/°C\n \n非线性: ±0.1%\n \n\n \n在产品使用寿命期间具有低漂移:±0.5%(最大值)\n \n对外部磁场具有高抗扰度\n \n电源抑制比低:60dB\n \n信号带宽: 1MHz\n \n低传播延迟: 80ns\n \n快速过流检测响应:50; | TI 德州仪器 | TI | |
TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.756 Mbytes 页数:40 Pages | TI 德州仪器 | TI | ||
TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72932 Mbytes 页数:41 Pages | TI 德州仪器 | TI | ||
TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72987 Mbytes 页数:41 Pages | TI 德州仪器 | TI | ||
TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72932 Mbytes 页数:41 Pages | TI 德州仪器 | TI |
技术参数
- Input offset current (±) (max) (mA):
130
- Input offset current drift (±) (typ) (µA/°C):
867
- Features:
Alert Function
- Supply voltage (max) (V):
5.5
- Supply voltage (min) (V):
3
- Small-signal bandwidth (Hz):
1000000
- Sensitivity error (%):
0.75
- Sensitivity error drift (±) (max) (ppm/°C):
50
- Rating:
Catalog
- Operating temperature range (°C):
-40 to 125
- Creepage (min) (mm):
8.1
- Clearance (min) (mm):
8.1
- Isolation rating:
Reinforced
- Surge isolation voltage (VIOSM) (VPK):
10000
- 封装:
SOIC (DVG)
- 引脚:
10
- 尺寸:
106.09 mm² 10.3 x 10.3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
TRINAMIC |
25+ |
传感器 |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
NIPPON |
2022+ |
SMD |
120000 |
原厂代理 终端免费提供样品 |
询价 | ||
KMCEMNT |
23+ |
ce-e1002k ce-all-e1 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
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