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U20120DG

20.0AmpereHeatsinkDoublerPolarityUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U20120G

20.0AmpereHeatsinkCommonCathodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U20120GR

20.0AmpereHeatsinkCommonAnodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U20120RG

20.0AmpereHeatsinkCommonAnodeUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

U20120SG

20.0AmpereHeatsinkSeriesConnectionUltraFastRecoveryRectifiers

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半导体思祁半导体有限公司

UFT20120

ULTRAFASTRECOVERYMODULES

MicrosemiMicrosemi Corporation

美高森美美高森美公司

UFT20120

UltrafastRecoveryModules

MicrosemiMicrosemi Corporation

美高森美美高森美公司

V20120C

DualHighVoltageTrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS Forusein

VishayVishay Siliconix

威世科技威世科技半导体

V20120C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V20120C

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.54VatIF=5A

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip260°C,40s(forTO-220AB,ITO-220ABandTO-262AApackage) •Componentinacco

VishayVishay Siliconix

威世科技威世科技半导体

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