| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | Fuji | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET(VDSS=500V,RDS(on)typ.=0.190廓,Trrtyp.=170ns,ID=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity •Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TRINNO |
21+ |
TO-3P |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
IXYS |
17+ |
TO-3P |
51 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IXYS |
17+ |
TO-3P |
151 |
全新原装 实单必成 |
询价 | ||
IXYS |
TO-3P |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
IXYS/艾赛斯 |
23+ |
NA/ |
3301 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TRINNO |
24+ |
TO-3PN |
6000 |
原装房间现货可出样品 |
询价 | ||
双通 IC |
22+ |
1000000 |
专营插件.贴片 电解电容 全新原装现货 |
询价 | |||
TRINNO |
22+23+ |
TO-3P |
35359 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TRINNO |
1844+ |
TO-3P |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 |
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