首页 >TM1721IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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DualFeedEmbeddedBeiDou/Galileo/GPS/GLONASSAntenna | TALLYSMAN Tallysman Wireless Inc. | TALLYSMAN | ||
CrystalUnitSMD2.5x2.040.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A) RDS(on)3=17.0mΩMAX.(VGS=4.0V,ID=5.0A) •LowCiss:Ciss=2200pFTYP. •Built-inG-Sprotectiondi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1721isN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION TheµPA1721isN-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandpowermanagementapplicationsofnotebookcomputers. FEATURES •Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE FEATURES •Lowon-resistance RDS(on)1=10.5mΩMAX.(VGS=10V,ID=5.0A) RDS(on)2=14.0mΩMAX.(VGS=4.5V,ID=5.0A) RDS(on)3=17.0mΩMAX.(VGS=4.0V,ID=5.0A) •LowCiss:Ciss=2200pFTYP. •Built-inG-Sprotectiondi | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SCREWDRIVERSSETS | PERFORMANCETOOLS Wilmar LLC | PERFORMANCETOOLS |
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