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首页>TLV27L2-Q1>芯片详情
TLV27L2-Q1_TI/德州仪器_Operational Amplifier兆亿微波
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产品属性
- 类型
描述
- 制造商编号
:TLV27L2-Q1
- 生产厂家
:德州仪器
- Rail-to-rail
:In to V-
- GBW (Typ) (MHz)
:0.16
- Slew rate (Typ) (V/us)
:0.06
- Vos (offset voltage @ 25 C) (Max) (mV)
:5
- Iq per channel (Typ) (mA)
:0.007
- Vn at 1 kHz (Typ) (nV/rtHz)
:89
- Rating
:Automotive
- Operating temperature range (C)
:-40 to 125
- Offset drift (Typ) (uV/C)
:1.1
- Features
:—
- Input bias current (Max) (pA)
:60
- CMRR (Typ) (dB)
:86
- Output current (Typ) (mA)
:0.4
- Architecture
:CMOS
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- TLV27L2IDGK
- TLV27V2IDR
- TLV27L2IDG4
- TLV2875I
- TLV27L2ID
- TLV2888DR
- TLV2932
- TLV27L2CDRG4
- TLV2932IPW
- TLV27L2CDR
- TLV30007IDR
- TLV3000832ID
- TLV27L2CDGKRG4
- TLV3011
- TLV27L2CDGKR
- TLV3011A1DCKR
- TLV27L2CDGKG4
- TLV3011AID
- TLV27L2CDGK
- TLV3011AIDBR
- TLV27L2CD
- TLV3011AIDBV
- TLV27L2AI
- TLV3011AIDBVR
- TLV27L2
- TLV3011AIDBVRG4
- TLV3011AIDBVRIC
- TLV27L1IDRG4
- TLV27L1IDR
- TLV3011AIDBVT
- TLV27L1IDG4
- TLV3011AIDBVT(R)
- TLV27L1IDBVTG4
- TLV3011AIDBVTG4
- TLV27L1IDBVT
- TLV3011AIDCK
- TLV3011AIDCKR
- TLV3011AIDCKRG4
- TLV27L1IDBVRG4
- TLV3011AIDCKRIC
- TLV27L1IDBVR,
- TLV27L1IDBVR
- TLV3011AIDCKT
- TLV27L1IDBV
- TLV3011AIDCKTG4
- TLV27L1ID



