Advanced LinCMOSE RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

文件：551.51 Kbytes 页数：28 Pages

TI

德州仪器

Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

文件：813.71 Kbytes 页数：32 Pages

TI

德州仪器

SWITCHING P-CHANNEL POWER MOSFET

文件：149.55 Kbytes 页数：7 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V,

文件：309.8 Kbytes 页数：9 Pages

RENESAS

瑞萨

3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and

文件：140.58 Kbytes 页数：6 Pages

NEC

瑞萨