UR1106W

SingleColorSuperWideAngleType(h=1.3mm)

Productfeatures •OuterDimension2.5x2.0x1.3mm(LxWxH) •Temperaturerange StorageTemperature:-40℃～120℃ OperatingTemperature:-40℃～100℃ •Lead–freesolderingcompatible •RoHScompliant

USC1106

RECTIFIER,upto400V,2.1A,50ns

VB1106K

N-Channel100-V(D-S)MOSFET

VB1106K

N-Channel100-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

VBA1106N

N-Channel100-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •HighFrequencyBoostConverter •LEDBacklightforLCDTV

VBE1106N

N-Channel100V(D-S)MOSFET

VBE1106N

N-Channel100V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100UIStested APPLICATIONS •Primarysideswitch

VBM1106S

N-Channel100-V(D-S)SuperTrenchPowerMOSFET

APPLICATIONS •IsolatedDC/DCConverters FEATURES •SuperTrenchtechnologyPowerMOSFET •ExcellentgatechargexRds(on)product(FOM) •Verylowon-resfistanceRds(on) •100RgandUISTested

VEC1106

PNPEpitaxialPlanarSiliconTransistorDC/DCConverterApplications

PNPEpitaxialPlanarSiliconTransistor Features •AdoptionofMBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •Highspeedswitching. •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.75mm). •Highallowablepowerdissi

VN1106ND

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs???