丝印：TLP5702H；Package：11-4N1A；Photocouplers Infrared LED & Photo IC

Applications • Photovoltaic (PV) Power Conditioning Systems • Industrial Inverters • Induction Cooktop and Home Appliances • Air Conditioner Inverters • MOSFET Gate Drivers • IGBT Gate Drivers General The TLP5702H is a photocoupler in a 6-pin SO6L package that consists of an infrared LED

文件：978.86 Kbytes 页数：18 Pages

TOSHIBA

东芝

Photocoupler (photo-IC output)

FeatureHigh temperature 125 degC operation\nApplication ScopePV inverter / Inverter / Induction cooktop\nFunctionIGBT driver\nNumber of Circuits1\nRoHS Compatible Product(s) (#)Available

Toshiba

东芝

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

文件：176.33 Kbytes 页数：4 Pages

CEL

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS DESCRIPTION The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifier

文件：176.33 Kbytes 页数：4 Pages

CEL

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

FEATURES • Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V : Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V • Single Supply voltage : VDS = 3.0 V TYP. • Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

文件：231.97 Kbytes 页数：13 Pages

RENESAS

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