首页 >TLP541G(N.F)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TO-2205ATriac | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TO-220F5ATriac ■Features ●Repetitivepeakoff-statevoltage:VDRM=400,600V ●RMSon-statecurrent:IT(RMS)=5A ●Gatetriggercurrent:IGT=20mAmax(MODE,,) ●Isolationvoltage:VISO=1500V(50HzSinewave,RMS) ●ULapprovedtypeavailable | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
TO-220F5ATriac 3-2Triacs Thyristors | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
32/16Single-Endedor16/8DifferentialA/DChannels TheTPMC541isastandardsingle-wide32bit33MHzPCI MezzanineCard(PMC)providing upto32/16single-endedor16/8differential16bit bipolaranaloginputchannels, 8/4single-endedsimultaneousupdate16bit unipolar/bipolaranalogoutputchannelsand 8tristatecapable5V-toleran | TEWS TEWS Technologies GmbH | TEWS | ||
32/16Single-Endedor16/8DifferentialA/DChannels TheTPMC541isastandardsingle-wide32bit33MHzPCI MezzanineCard(PMC)providing upto32/16single-endedor16/8differential16bit bipolaranaloginputchannels, 8/4single-endedsimultaneousupdate16bit unipolar/bipolaranalogoutputchannelsand 8tristatecapable5V-toleran | TEWS TEWS Technologies GmbH | TEWS | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetectorwithDelaycircuit GENERALDESCRIPTIONS TheVDDseriesaredelaycircuitbuilt-involtagedetectorswithlow voltage,lowpowerconsumptionandhighaccuracy.Theaccuracyofthe detectionvoltageisdetectedbasedonavoltagereferenceofhigh accuracythatthetemperaturecoefficientiscontrolled.Thedetect | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM |
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