APM2095PU

P-ChannelEnhancementModeMOSFET

Features •-20V/-3.6A,RDS(ON)=70mΩ(typ.)@VGS=-4.5V RDS(ON)=100mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBattery

APM2095PUC-TR

P-ChannelEnhancementModeMOSFET

Features •-20V/-3.6A,RDS(ON)=70mΩ(typ.)@VGS=-4.5V RDS(ON)=100mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBattery

APM2095PUC-TU

P-ChannelEnhancementModeMOSFET

Features •-20V/-3.6A,RDS(ON)=70mΩ(typ.)@VGS=-4.5V RDS(ON)=100mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-252Package Applications •PowerManagementinNotebookComputer,PortableEquipmentandBattery

CHA2095A

36-40GHzLowNoiseVeryHighGainAmplifier

Description TheCHA2095aisafour-stagemonolithiclownoiseamplifier.Itisdesignedforawiderangeofapplications,frommilitarytocommercialcommunicationsystems. ThecircuitismanufacturedwithaHEMTprocess:0.25µmgatelength,viaholesthroughthesubstrate,airbridgesandelec

CHA2095A

36-40GHzLowNoiseVeryHighGainAmplifier

CHX2095

7.5-30GHzFrequencyMultiplier

CHX2095

7.5-30GHzFrequencyMultiplier

Description TheCHX2095isafrequencymultiplierby4monolithiccircuit.Itisdesignedforawiderangeofapplications,frommilitarytocommercialcommunicationsystems.ThebacksideofthechipisbothRFandDCgrounded.Thishelpstosimplifytheassemblyprocess. MainFeatures ■Broadb

CT2095LPST-ND

DIPSwitches

CT2095MS-ND

DIPSwitches

CXA2095

Y/C/RGB/Sync/DeflectionforColorTV

Description TheCXA2095SisabipolarICwhichintegratestheluminancesignalprocessing,chromasignalprocessing,RGBsignalprocessing,andsyncanddeflectionsignalprocessingfunctionsforNTSCsystemcolorTVsontoasinglechip.Thefollowingfunctionshavebeenaddedtothesamefunct