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MJD127-1

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJD127-1

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

MJD127-1

SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

TEM127-1

ThermoelectricModule

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

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