首页 >TLE8209-R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII) LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCApplications ●Smallfootprintduetosmallandthinpackage ●Lowdrain−sourceONresistance:RDS(ON)=30mΩ(typ.) ●Highforwardtransferadmittance:|Yfs|=10S(typ.) ●Lowleakagecurrent:IDSS=10µA(max | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
DualN-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Highperformance,LowCost20pinOTP LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=19mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=9.2S(typ.) •Lowleakagecurrent:ID | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
YXCSHENZHEN YANGXING TECHNOLOGY CO., LTD 扬兴深圳扬兴科技有限公司 | YXC |
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