首页 >TLE8014E>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TAI5MPIRMobileCamera •Max.5MPresolution •3.0mmfixedlens •Color:0.03Lux(F1.6,1/30sec),BW:0.003Lux(F1.6,1/30sec,30IRE) •Maximum30fps@5MP(H.265/H.264) •IRviewablelength30m(98.42ft) •Hard-coateddomebubble, •EIS,Shockdetection,Heater,Built-inMic •H.265,H.264,MJPEG,WiseStreamⅢ(Usin | HANWHAVISIONHanwha Vision Co., Ltd. All rights Reserved. 韩华韩华集团 | HANWHAVISION | ||
DomeCover •Color:White(BaseTop)/Transparent(CoverGlass) •Material:Aluminum(BaseTop)/ Polycarbonate(PC)(CoverGlass) •Dimensions:105.4(W)x46.4(H)x104.4(D)mm(4.15x1.83x4.11) •Weight:172g(0.38lb) •Supportedproduct:TNV-C8014RM/C8034RM | HANWHAVISIONHanwha Vision Co., Ltd. All rights Reserved. 韩华韩华集团 | HANWHAVISION | ||
SmokedDomecover •Material:Aluminum(BaseTop), Polycarbonate(PC)(CoverGlass) •Weight:172g(0.38lb) •Dimensions:105.4(W)x46.4(H)x104.4(D)mm(4.15x1.83x4.11) •Color:White(BaseTop),Transparentsmoked(CoverGlass) | HANWHAVISIONHanwha Vision Co., Ltd. All rights Reserved. 韩华韩华集团 | HANWHAVISION | ||
Plate •Material:Aluminum •Dimensions/weight: 121.7(W)x11(H)x120.7(D)mm(4.79x0.43x4.75) /130g(0.29lb) RJ45Gender:20.2(W)x20(H)x50.8(D)mm(0.80x0.79x2.00) /32g(0.07lb) •Color: MountPlate:White RJ45Gender:Black | HANWHAVISIONHanwha Vision Co., Ltd. All rights Reserved. 韩华韩华集团 | HANWHAVISION | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
High-EfficiencyDC竊뢈CConverterApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(UltraHighspeedU-MOSIII) High-EfficiencyDC／DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •High-speedswitching •Smallgatecharge:Qsw=7.4nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=7.1mΩ(typ.) •Highforward | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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