首页 >TLE6922AA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualN-ChannelLogicalLevelMOSFET | AnalogPower Analog Power | AnalogPower | ||
30VDualAsymmetricN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
25VDualAsymmetricN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
SimpleDriveRequirement,EasyforSynchronousBuckConverterApplication | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
DriverFor3PhaseBlushlessMotor | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Dual-ChannelLowNoiseAmplifier17.7–21.2GHz Features ■Frequency:17.7–21.2GHz ■Gain:19.5dBtyp.at19.5GHz ■Noisefigure:1.8dB ■OutputP1dB:-2.3dBm ■Powerconsumption:15mW/ch ■Channelisolation:30dB ■Supplyvoltage:0.9–1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier17.7??21.2GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier17.7–21.2GHz Features ■Frequency:17.7–21.2GHz ■Gain:19.5dBtyp.at19.5GHz ■Noisefigure:1.8dB ■OutputP1dB:-2.3dBm ■Powerconsumption:15mW/ch ■Channelisolation:30dB ■Supplyvoltage:0.9–1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier17.7??21.2GHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
Dual-ChannelLowNoiseAmplifier17.7–21.2GHz Features ■Frequency:17.7–21.2GHz ■Gain:19.5dBtyp.at19.5GHz ■Noisefigure:1.8dB ■OutputP1dB:-2.3dBm ■Powerconsumption:15mW/ch ■Channelisolation:30dB ■Supplyvoltage:0.9–1.0V ■Commonbiascontrolinput ■Compactsizeforplanarintegrationonλ/2grid ■2.7×2.7 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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