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4905	文件：29.55 Kbytes Page：1 Pages	AdjustableRFInductors	BournsBourns Electronic Solutions 伯恩斯	Bourns
4905	文件：735.51 Kbytes Page：9 Pages	VHBTape-SpecialtyTapes	3M 3M Electronics	3M
4905-S	文件：29.55 Kbytes Page：1 Pages	AdjustableRFInductors	BournsBourns Electronic Solutions 伯恩斯	Bourns
AUIRF4905	文件：277.63 Kbytes Page：11 Pages	AdvancedPlanarTechnologyLowOn-Resistance	IRF International Rectifier	IRF
AUIRF4905	文件：352.97 Kbytes Page：9 Pages	AdvancedPlanarTechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
AUIRF4905L	文件：267.36 Kbytes Page：14 Pages	AdvancedPlanarTechnologyP-ChannelMOSFET Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower	IRF International Rectifier	IRF
AUIRF4905L	文件：621.06 Kbytes Page：12 Pages	AdvancedPlanarTechnology Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
AUIRF4905S	文件：267.36 Kbytes Page：14 Pages	AdvancedPlanarTechnologyP-ChannelMOSFET Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower	IRF International Rectifier	IRF
AUIRF4905S	文件：621.06 Kbytes Page：12 Pages	AdvancedPlanarTechnology Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon
AUIRF4905STRL	文件：267.36 Kbytes Page：14 Pages	AdvancedPlanarTechnologyP-ChannelMOSFET Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower	IRF International Rectifier	IRF

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