首页 >TLE4279T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NylonKayakClips | HeycoHeyco. 海科 | Heyco | ||
BantamPlugCableAssembly | POMONA Pomona Electronics | POMONA | ||
BantamPlugCableAssembly | POMONA Pomona Electronics | POMONA | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-9A,RDS(ON)=72mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=46mW@VGS=4.5V. Leadfreeproductisacquired. -40V,-9A,RDS(ON)=72mW@VGS=10V. RDS(ON)=110mW@VGS=4. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) 40V,6.1A,RDS(ON)=32mW@VGS=10V. FEATURES RDS(ON)=46mW@VGS=4.5V. -40V,-4.3A,RDS(ON)=66mW@VGS=-10V. RDS(ON)=105mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisa | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■40V,6.1A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-4.3A,RDS(ON)=66mΩ@VGS=-10V. RDS(ON)=105mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES ■40V,14A,RDS(ON)=32mΩ@VGS=10V. RDS(ON)=46mΩ@VGS=4.5V. ■-40V,-9A,RDS(ON)=72mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabil | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualEnhancementModeFieldEffectTransistor(NandPChannel) FEATURES 40V,14A,RDS(ON)=32mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=46mW@VGS=4.5V. Leadfreeproductisacquired. -40V,-9A,RDS(ON)=72mW@VGS=10V. RDS(ON)=110mW@VGS=4. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
IEEE802.3btPDwithTelemetryandPowerPriority FEATURES ►IEEE802.3btPoweredDevice(PD)Controller ►400kHzI2CInterface ►ContinuousVoltage,Current,andPowerTelemetry ►Dedicated14-BitDelta-SigmaCurrentandVoltageADCs ►AutomaticMaintainPowerSignature(MPS) ►SupportsUpto90WPDswithExtendedPower ►5-EventClassifi | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD |
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