丝印：TL084ACN；Package：PDIP；TL08xx FET-Input Operational Amplifiers

文件：4.55062 Mbytes 页数：66 Pages

TI

德州仪器

丝印：TL084ACN；Package：PDIP；TL08xx FET-Input Operational Amplifiers

文件：4.9873 Mbytes 页数：70 Pages

TI

德州仪器

丝印：TL084ACN；Package：PDIP；TL08xx FET-Input Operational Amplifiers

文件：5.27678 Mbytes 页数：75 Pages

TI

德州仪器

丝印：TL084ACN；Package：PDIP；TL08xx FET-Input Operational Amplifiers

文件：5.27678 Mbytes 页数：75 Pages

TI

德州仪器

丝印：TL084ACN；Package：PDIP；TL08xx FET-Input Operational Amplifiers

文件：4.9873 Mbytes 页数：70 Pages

TI

德州仪器

丝印：TL084ACN；Package：PDIP；TL08xx FET-Input Operational Amplifiers

文件：4.55062 Mbytes 页数：66 Pages

TI

德州仪器

JFET INPUT OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low–cost JFET input operational amplifiers combine two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offse

文件：169.2 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

TL08xx FET-Input Operational Amplifiers

1 Features . High slew rate: 20V/μs (TL08xH, typ) . Low offset voltage: 1mV (TL08xH, typ) . Low offset voltage drift: 2μV/°C . Low power consumption: 940μA/ch (TL08xH, typ) . Wide common-mode and differential voltage ranges . Common-mode input voltage range includes VCC+ . Low input bias

文件：5.39415 Mbytes 页数：78 Pages

TI

德州仪器

JFET INPUT OPERATIONAL AMPLIFIERS

These low–cost JFET input operational amplifiers combine two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset voltage. The BIFET technology provide

文件：169.2 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

GENERAL PURPOSEJ-FET QUAD OPERATIONAL AMPLIFIERS

Description The TL084, TL084A and TL084B are high-speed JFET input quad operational amplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset vol

文件：113.9 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体