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K8A50D

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.7Ω(typ.) •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK8A50D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.85Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK8A50D

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.7Ω(typ.) •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK8A50D

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK8A50DA

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK8A50DA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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