MOSFETs Silicon N-channel MOS (U-MOS ??

Features (1) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Applications • Switching Voltage Regulators

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Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current ID 80 A \nPower Dissipation PD 125 W \nDrain-Source voltage VDSS 60 V ;

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