Switching Voltage Regulators

Features (1) Low drain-source on-resistance: RDS(ON)= 0.5 Ω(typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth= 2.7 to 3.7 V (VDS= 10 V, ID= 0.35 mA) Applications • Switching Voltage Regulators

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丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

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无锡固电

丝印：TK7P60W5；Package：DPAK；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators • Motor Drivers Features (1) Fast reverse recovery time: trr = 75 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3

文件：246.59 Kbytes 页数：10 Pages

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丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：328.4 Kbytes 页数：2 Pages

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无锡固电

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 7 A \nPower Dissipation PD 60 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

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Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 7 A \nPower Dissipation PD 60 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

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