TK62N60X

丝印：K62N60X；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.033Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)High-speedswitchingpropertieswithlowercapacitance (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=3.1mA)

TK62N60X

Power MOSFET (N-ch 500V VDSS 700V); Drain current ID 61.8 A \nPower Dissipation PD 400 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V \n;

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国\n

TK62N60X

isc N-Channel MOSFET Transistor

TK62N60W

iscN-ChannelMOSFETTransistor

TK62N60W

SwitchingVoltageRegulators