Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

文件：332.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：1.33135 Mbytes 页数：5 Pages

DOINGTER

杜因特

Switching Regulator Applications

文件：215.77 Kbytes 页数：6 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 5 A \nPower Dissipation PD 80 W \nDrain-Source voltage VDSS 500 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

Power MOSFET (N-ch 250V VDSS 500V)

Application Scope：Switching Voltage Regulators\nPolarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 5 A \nPower Dissipation PD 80 W \nDrain-Source voltage VDSS 500 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝