丝印：K5A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance : RDS(ON) = 1.9 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.5 mA)

文件：393.59 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 5 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 800 V ;

Toshiba

东芝

Plastic Silicon Rectifiers

Features ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

文件：175.95 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Plastic Silicon Rectifiers

Features ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

文件：175.93 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Schottky Barrier Rectifiers

文件：51.72 Kbytes 页数：2 Pages

COMCHIP

典琦