High-Efficiency DC-DC Converter Applications Desktop PC Applications

Features (1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) Applications • Swi

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；iscN-Channel MOSFET Transistor

文件：332.95 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 30 V (D-S) MOSFET

文件：1.02495 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Power MOSFET (N-ch single VDSS 30V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅥ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 50 A \nPower Dissipation PD 47 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝