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TK4A60DB

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.7A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TK4A60DB

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(π-MOSⅦ)

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.2S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.4to4.4V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK4A60DB

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TP4A60S

SensitiveGateTriac

APOLLOELECTRON

Apollo Electron Co., Ltd.

TR4A60

TR4A60

APOLLOELECTRON

Apollo Electron Co., Ltd.

TR4A60S

SensitiveGateTriac

GeneralDescription ThisdeviceissuitablefordirectcouplingtoTTL,HTL,CMOSandapplicationsuchasvariouslogicfunctions,lowpowerACswitchingapplications,suchasfanspeed,smalllightcontrollersandhomeapplianceequipment.ThisdevicemaysubstituteforZ0405MF,2N6075,BT134-

APOLLOELECTRON

Apollo Electron Co., Ltd.

VSIB4A60

Single-PhaseSingleIn-LineBridgeRectifier

VishayVishay Siliconix

威世科技威世科技半导体

WTD4A60S

SensitiveGateTriac

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

WTPB4A60SW

Bi-DirectionalTriodeThyristor

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

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