Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS??

Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Small gate charge : Qg = 59 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 15 mΩ(typ.) • High forward transfer admittance: |Yfs| = 60 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) • Enhanc

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Power MOSFET (N-ch single 60V VDSS 150V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 40 A \nPower Dissipation PD 125 W \nDrain-Source voltage VDSS 100 V ;

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TO-220F

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DIP-7

TAKION

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TO220F

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