MOSFETs Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 13.7 mΩ (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID =

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N-Channel MOSFET uses advanced trench technology

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Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nAEC-Q101：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 15 A \nPower Dissipation PD 46 W \nDrain-Source voltage VDSS 40 V \nGate-Source voltage VGSS +/-20 V ;

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