首页 >TK13A65D(Q)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(on)=0.4Ω(typ.) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.32Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FieldEffectTransistorSiliconNChannelMOSType(DTMOS?? SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.32Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=8.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.4Ω(typ.) (2)Highforwardtransferadmittance:|Yfs|=7.5S(typ.) (3)Lowleakagecurrent:IDSS=10µA(max)(VDS=650V) (4)Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA) Applications •SwitchingVoltageRegulato | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(on)=0.4Ω(typ.) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.32Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
FieldEffectTransistorSiliconNChannelMOSType(DTMOS?? SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.32Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=8.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=650V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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