isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

丝印：K10A80E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS (?-MOS??

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TOSHIBA

东芝

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 10 A \nPower Dissipation PD 50 W \nDrain-Source voltage VDSS 800 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

东芝

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.45mA)

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TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件：289.27 Kbytes 页数：2 Pages

ISC

无锡固电

THYRISTOR - 10A 800V TO-262

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NIEC