FS10A80CT

10.0AmpereSurfaceMountDualCommonAnodeUltraFastRecoveryRectifiers

Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS

GSIB10A80

SINGLEPHASEGLASSPASSIVATEDBRIDGERECTIFIERVoltage:50to1000VCurrent:10.0A

HTS10A80AS

3Quadrants10ATRIAC

ITK10A80W

iscN-ChannelMOSFETTransistor

S10A80

SCHOTTKYBARRIERRECTIFIERS(10A,70-100V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

SR10A80F-G

SchottkyBarrierRectifiers

SR10A80-G

SchottkyBarrierRectifiers

STF10A80

Bi-DirectionalTriodeThyristor

T10A80L

10AmpSiliconRectifiers

Features •Lowforwardvoltagedrop •Highcurrentcapability •Highforwardsurgecurrentcapability •Highreliability •Hightemperaturesolderingguaranteed:260°C/10seconds /.375(9.5mm)leadlength,5lbs(2.3kg)tension •RoHScompliant

TK10A80E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.