Power Management Switches

Features (1) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (3) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) Applications • Motor Drivers • Power Management Switches

文件：253.53 Kbytes 页数：9 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：DPAK；Package：TO-252；Isc P-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 36mΩ (MAX) • Enhancement mode: Vth =0.8 to 2V (VDS = -10 V, ID=-7.5A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：333.76 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (P-ch single)

Application Scope：Motor drivers / Switching regulators\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID -15 A \nPower Dissipation PD 29 W \nDrain-Source voltage VDSS -40 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝