首页 >TJ15P04M3(T6L1,NQ>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
IscP-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=36mΩ(MAX) •Enhancementmode: Vth=0.8to2V(VDS=-10V,ID=-7.5A) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerManagementSwitches Features (1)Lowdrain-sourceon-resistance:RDS(ON)=28mΩ(typ.)(VGS=-10V) (2)Lowleakagecurrent:IDSS=-10µA(max)(VDS=-40V) (3)Enhancementmode:Vth=-0.8to-2.0V(VDS=-10V,ID=-0.1mA) Applications •MotorDrivers •PowerManagementSwitches | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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