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TIPL760

iscSiliconNPNDarlingtonPowerTransistor

FEATURES ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min.) ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·RuggedTriple-duffusedplanarconstruction

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TIPL760

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●RuggedTriple-DiffusedPlanarConstruction ●4AContinuousCollectorCurrent ●OperatingCharacteristicsFullyGuaranteed at100°C ●1000VoltBlockingCapability ●75Wat25°CCaseTemperature

POINN

Power Innovations Ltd

TIPL760A

NPNSILICONPOWERTRANSISTORS

BournsBourns Electronic Solutions

伯恩斯

TIPL760A

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●RuggedTriple-DiffusedPlanarConstruction ●4AContinuousCollectorCurrent ●OperatingCharacteristicsFullyGuaranteed at100°C ●1000VoltBlockingCapability ●75Wat25°CCaseTemperature

POINN

Power Innovations Ltd

TIPL760B

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●RuggedTriple-DiffusedPlanarConstruction ●4AContinuousCollectorCurrent ●OperatingCharacteristicsFullyGuaranteed at100°C ●1200VoltBlockingCapability ●75Wat25°CCaseTemperature

POINN

Power Innovations Ltd

TIPL760B

NPNSILICONPOWERTRANSISTORS

BournsBourns Electronic Solutions

伯恩斯

TIPL760C

NPNSILICONPOWERTRANSISTORS

BournsBourns Electronic Solutions

伯恩斯

TIPL760C

iscSiliconNPNPowerTransistor

DESCRIPTION •RuggedTriple-duffusedplanarconstruction FEATURES •Collector-EmitterBreakdownVoltage-:V(BR)CEO=550V(Min.) •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

TIPL760C

NPNSILICONPOWERTRANSISTORS

NPNSILICONPOWERTRANSISTORS ●RuggedTriple-DiffusedPlanarConstruction ●4AContinuousCollectorCurrent ●OperatingCharacteristicsFullyGuaranteed at100°C ●1200VoltBlockingCapability ●75Wat25°CCaseTemperature

POINN

Power Innovations Ltd

TLV760

100-mA,30-V,Fixed-Output,Linear-VoltageRegulator

TI1Texas Instruments

德州仪器美国德州仪器公司

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