COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Also TIP36B is a PNP type. ■ STMicroelectronic PREFERRED SALESTYPES

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STMICROELECTRONICS

意法半导体

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40 A Peak Collector Current • Customer-Specified Selections Available

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POINN

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

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SAVANTIC

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applica

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STMICROELECTRONICS

意法半导体

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

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CDIL

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

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CDIL

TRIPLE DIFFUSED PNP TRANSISTOR(HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP35C. • Icmax:-25A.

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KEC

KEC(Korea Electronics)

COMPLEMENTARY SILICON POWER TRANSISTORS

Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0

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ONSEMI

安森美半导体

HIGH POWER TRANSISTORS

DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C.

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UTC

友顺

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I

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Motorola

摩托罗拉