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TIP3055G

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件:114.97 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

TIP3055G

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件:114.97 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

TIP3055HVF

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

文件:89.12 Kbytes 页数:2 Pages

CDIL

TIP3055T

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@IC = 4A • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A • Complement to Type TIP2955T APPLICATIONS • Designed for general-purpose switching and amplifier applications.

文件:148.75 Kbytes 页数:2 Pages

ISC

无锡固电

TIP30A

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS THE TIP29 SERIES (NPN) AND TIP30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND SWITCHING APPLICATIONS.

文件:56.36 Kbytes 页数:1 Pages

MICRO-ELECTRONICS

TIP30A

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS • Designed for Complementary Use with the TIP29 Series • 30 W at 25°C Case Temperature • 1 A Continuous Collector Current • 3 A Peak Collector Current • Customer-Specified Selections Available

文件:85.91 Kbytes 页数:6 Pages

POINN

TIP30A

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP29/29A/29B/29C APPLICATIONS ·For use in general purpose power amplifer and switching applications

文件:103.78 Kbytes 页数:3 Pages

SAVANTIC

TIP30A

POWER TRANSISTORS(1.0A,40-100V,30W)

文件:145.26 Kbytes 页数:3 Pages

MOSPEC

统懋

TIP30A

Complementary Silicon Plastic Power Transistors

Features • Collector-Emitter sustaining voltage - Vceo (sus) = 60V (Minimum) - TIP30A = 100V (Minimum) - TIP30C • Collector-Emitter saturation voltage - Vce (sat) = 0.7V (Maximum) at Ic = 1A • Current gain-bandwidth product fT = 3MHz (Minimum) at Ic = 200 mA

文件:364.19 Kbytes 页数:4 Pages

MULTICOMP

易络盟

TIP30A

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type TIP29/29A/29B/29C APPLICATIONS • For use in general purpose power amplifer and switching applications

文件:133.06 Kbytes 页数:3 Pages

ISC

无锡固电

晶体管资料

  • 型号:

    TIP30

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-PNP

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    45V

  • 最大电流允许值:

    2A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    30W

  • 放大倍数:

  • 图片代号:

    B-10

  • vtest:

    45

  • htest:

    999900

  • atest:

    2

  • wtest:

    30

技术参数

  • Product Polarity:

     PNP

  • SMD/ThroHole:

     Through Hole

  • VCEO (V):

     -40

  • VCBO (V):

     40

  • VEBO (V):

     5.0

  • IC (A):

     -1.0

  • PC (W):

     30

  • HFE:

     40

  • @IC (mA):

     -200

  • @VCE (V):

     -4.0

  • ICBO:

     

  • IEBO:

     1.0mA

  • VCE(sat) (V):

     -0.7

  • VBE(sat) (V):

     1.3

  • FT (MHz):

     3

  • Package Qty:

     Tube

  • FIT:

     48; Tj=100℃

供应商型号品牌批号封装库存备注价格
MOT
TO220/
64
全新原装进口自己库存优势
询价
ST
25+
TO-3P
18000
原厂直接发货进口原装
询价
ST
TO-220
1000
原装长期供货!
询价
DISCRETE
50
STM
73100
询价
ST
24+/25+
TO-220
5000
原装正品现货库存价优
询价
ONSemiconductor
24+
TO-218
14
询价
ON
11+
TO-3P
8000
全新原装,绝对正品现货供应
询价
SMG
05+
原厂原装
101
只做全新原装真实现货供应
询价
ST
25+
TO-247
5080
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MIS
24+
原厂封装
3000
原装现货假一罚十
询价
更多TIP3供应商 更新时间2026-1-28 9:31:00