首页 >TIP142MOS()>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SILICONPLANARDARLINGTONPOWERTRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL Continental Device India Limited | CDIL | ||
NPNEpitaxialSiliconDarlingtonTransistor Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | SYC SYC Electronica | SYC | ||
SiliconNPNDarlingtonPowerTransistor Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
POWERTRANSISTORS(10A,60-100V,80W) DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
MonolithicConstructionWithBuiltInBase-EmitterShuntResistors Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain- :hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=100V(Min) •ComplementtoTypeTIP147T APPLICATIONS •Designedforgeneralpurposeamplifierandlowspeed switchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SILICONPLANARPOWERDARLINGTONTRANSISTORS SILICONPLANARPOWERDARLINGTONTRANSISTORS ForuseinPowerLinearandSwitchingApplications | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■MonolithicDarlingtonconfiguration ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
MonolithicConstructionWithBuiltInBase-EmitterShuntResistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147 | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
ComplementarypowerDarlingtontransistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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