零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SILICON PLANAR DARLINGTON POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL CDIL | CDIL | ||
POWER TRANSISTORS(10A,60-100V,80W) DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP | MOSPEC MOSPEC | MOSPEC | ||
Monolithic Construction With Built In Base-Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147 | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min) •ComplementtoTypeTIP145T APPLICATIONS •Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPN Epitaxial Silicon Darlington Transistor Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
isc Silicon NPN Darlington Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPN Epitaxial Silicon Darlington Transistor | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Monolithic Construction With Built In Base-Emitter Shunt Resistors | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN DARL 60V 10A TO220-3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-N+Darl+Di
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
60V
- 最大电流允许值:
10A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
BDX65,BDV65,BDV67,BDW83A,MJ3000,FH9C,
- 最大耗散功率:
125W
- 放大倍数:
β>1000
- 图片代号:
B-71
- vtest:
60
- htest:
999900
- atest:
10
- wtest:
125
产品属性
- 产品编号:
TIP140
- 制造商:
Central Semiconductor Corp
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
NPN
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
1000 @ 5A,4V
- 工作温度:
-65°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-218-3
- 供应商器件封装:
TO-218
- 描述:
TRANS NPN 60V 10A TO218
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
isc |
2024+ |
TO-3P |
5000 |
国产品牌isc,质量等同原装 |
询价 | ||
FAIRCHILD |
08+(pbfree) |
TO-3P |
8866 |
询价 | |||
SGS |
05+ |
原厂原装 |
4486 |
只做全新原装真实现货供应 |
询价 | ||
SHI |
23+ |
TO-3P |
18000 |
询价 | |||
ST |
2017+ |
TO-218 |
65895 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
FAIRCHILD |
16+ |
TO-3P |
60000 |
绝对原装进口现货可开17%增值税发票 |
询价 | ||
ST |
11+ |
TO-3P |
8000 |
全新原装,绝对正品现货供应 |
询价 | ||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
PHILIPS |
新 |
253 |
全新原装 货期两周 |
询价 |