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TIP126

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP120, TIP121 and TIP122 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件:105.7 Kbytes 页数:6 Pages

POINN

TIP126

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLNGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP120/121/122 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

文件:132.52 Kbytes 页数:4 Pages

SAVANTIC

TIP126

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

文件:510.76 Kbytes 页数:5 Pages

SEMIHOW

TIP126

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

文件:510.76 Kbytes 页数:5 Pages

TAI-SAW

嘉硕科技

TIP126

Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件:243.33 Kbytes 页数:4 Pages

TAITRON

TIP126

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件:53.42 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

TIP126

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件:1.46806 Mbytes 页数:2 Pages

DGNJDZ

南晶电子

TIP126

Plastic-Encapsulated Transistors

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

文件:57.97 Kbytes 页数:1 Pages

TEL

TIP126

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

文件:80.3 Kbytes 页数:3 Pages

TEL

TIP126

Plastic Medium-Power Complementary Silicon Transistors

文件:114.79 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

晶体管资料

  • 型号:

    TIP126

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    80V

  • 最大电流允许值:

    5A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD266A,BD648,BD700,BD900,BDW24B,BDW64B,FC75B,

  • 最大耗散功率:

    65W

  • 放大倍数:

    β>1000

  • 图片代号:

    B-10

  • vtest:

    80

  • htest:

    999900

  • atest:

    5

  • wtest:

    65

产品属性

  • 产品编号:

    TIP126

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    管件

  • 晶体管类型:

    PNP - 达林顿

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    4V @ 20mA,5A

  • 电流 - 集电极截止(最大值):

    2mA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    1000 @ 3A,3V

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220-3

  • 描述:

    TRANS PNP DARL 80V 5A TO220-3

供应商型号品牌批号封装库存备注价格
ST
24+
TO220
66500
只做原装进口现货
询价
MOT
05+
原厂原装
5805
只做全新原装真实现货供应
询价
24+
TO-220
10000
全新
询价
ST
11+
TO-220
8000
全新原装,绝对正品现货供应
询价
FAIRCHILD
2016+
TO-220
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
ST
17+
TO-220
6200
询价
ST
16+
TO-220
10000
全新原装现货
询价
ST
25+
TO-220
37
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
15800
24+
TO220/TO263
6868
原装现货,可开13%税票
询价
STM
23+
NA
10021
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
询价
更多TIP126供应商 更新时间2025-12-19 16:18:00