SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP110-111-112 Compliance to RoHS.

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COMSET

TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

Description Designed for use in general purpose amplifier and low-speed switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter

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DCCOM

道全

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP110/111/112 APPLICATIONS • For industrial use

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ISC

无锡固电

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Low Collector-Emitter Saturation Voltage ● Complementary to TIP112

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JIANGSU

长电科技

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP110, TIP111 and TIP112 ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 500 at 4 V, 2 A

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POINN

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP110/111/112 APPLICATIONS • For industrial use

文件：123.01 Kbytes 页数：4 Pages

SAVANTIC

Darlington Power Transistors (PNP)

Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件：194.97 Kbytes 页数：4 Pages

TAITRON

PNP SILICON POWER DARLINGTONS

PLASTIC POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications

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TRSYS

Transys Electronics

PNP Transistor Bare Die

Features Collector current up to 2A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

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SS