Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS ·For industrial use

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Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP105/106/107

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Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件：240.33 Kbytes 页数：4 Pages

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Silicon NPN Darlington Power Transistors

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司