Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage - Vceo(sus) = 60V (minimum) - TIP120, TIP125 80V (minimum) - TIP121, TIP126 100V (minimum) - TIP122, TIP127 • Collector-emitter saturation voltage - Vce(sat) = 2V (max

文件：1.13386 Mbytes 页数：5 Pages

MULTICOMP

易络盟

Darlington Transistors

[SGS] POWER DARLINGTONS The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, intended for use in power linear and switching applications. The complementary PNP types are the TIP125, TIP126 and TIP127 res

文件：403.23 Kbytes 页数：6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

文件：185.5 Kbytes 页数：4 Pages

ISC

无锡固电

BASE NPN / PNP

EPITAXIAL BASE NPN / PNP POWER DARLINGTONS

文件：810.29 Kbytes 页数：5 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ThinkiSemi mature NPN Epitaxial Darlington Transistor

Features ※ Complementary to TIP125/TIP126/TIP127 ※ Switching Times with Inductive Loads ※ Saturation Voltages ※ Leakage Currents ※ Fast Turn–Off Times Application ※ Medium Power Linear Switching Applications ※ AC and DC Motor Controls ※ Inverters,Solenoid and Relay Drivers Mechanical Dat

文件：636.29 Kbytes 页数：4 Pages

THINKISEMI

思祁半导体

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：1.46806 Mbytes 页数：2 Pages

DGNJDZ

南晶电子

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件：53.42 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN Transistor Bare Die

Features Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

文件：214.97 Kbytes 页数：2 Pages

SS

NPN Transistor Bare Die

Features Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

文件：210.49 Kbytes 页数：2 Pages

SS

Darlington Power Transistors (NPN)

Features •Designed for general-purpose amplifier and low speed switching applications •RoHS Compliant

文件：242.26 Kbytes 页数：4 Pages

TAITRON