TIOL112 and TIOL112x IO-Link Device Transceivers with Low Residual Voltage and Integrated Surge Protection in Small Packages

1 Features • 7-V to 36-V supply voltage • PNP, NPN or IO-Link configurable output – IEC 61131-9 COM1, COM2 and COM3 Data Rate Support • Functional safety-capable – Documentation available to aid in functional safety system design • Pin-compatible with TIOL111(x) with improved performance

文件：2.39527 Mbytes 页数：38 Pages

TI

德州仪器

TMCS1123 Precision Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • High continuous current capability: 75 ARMS • Robust reinforced isolation – Withstand isolation voltage: 5000 VRMS – Reinforced working voltage: 1100 VDC • High accuracy – Sensitivity error: 0.3 – Sensitivity drift: 20 ppm/°C – Offset error: 0.5 mV – Offset drift: 5 μV/°C –

文件：1.85945 Mbytes 页数：35 Pages

TI

德州仪器

TMCS1123 Precision 250kHz Hall-Effect Current Sensor With ±1.3kV Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation – Withstand isolation voltage: 5kVRMS – Reinforced working voltage: 1.3kVDC • High accuracy – Sensitivity error: ±0.1 – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2 – Offset er

文件：3.06071 Mbytes 页数：42 Pages

TI

德州仪器

TMCS1123 Precision 250kHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection

1 Features • High continuous current capability: 80ARMS • Robust reinforced isolation • High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±2μV/°C – Offset lifetime drif

文件：3.07718 Mbytes 页数：42 Pages

TI

德州仪器