TIP102

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=2.0V(Max)@IC=3A =2.5V

TIP102

TO-220-PowerTransistorsandDarlingtons

TIP102

DarlingtonPowerTransistors(NPN)

DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TIP102

NPNPlasticMedium-PowerSiliconTransistors

Features •MountingTorgue:5in-lbsMaximum •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LowCollector-EmitterSaturati

TIP102

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=4V,IC=3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP105/106/107

TIP102

NPNPlasticMedium-PowerSiliconTransistors

TIP102

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·ComplementtotypeTIP105/106/107 APPLICATIONS ·Forindustrialuse

TIP102

PlasticMedium-PowerComplementarySiliconTransistors

TIP102

NPNPlasticMedium-PowerSiliconTransistors

TIP102

SiliconPowerdarlingtonComplementarytransistors