MICROWAVE POWER GaAs FET

文件：47.58 Kbytes 页数：4 Pages

TOSHIBA

东芝

HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz

文件：144.48 Kbytes 页数：4 Pages

TOSHIBA

东芝

HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz

Toshiba

东芝

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

文件：240.12 Kbytes 页数：6 Pages

NEC

瑞萨

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

文件：108.79 Kbytes 页数：18 Pages

NEC

瑞萨

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

文件：108.79 Kbytes 页数：18 Pages

NEC

瑞萨