首页 >TIM4450-8L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
4.40-5.00GHz8-WattInternallyMatchedPowerFET FEATURES •4.40–5.00GHzBandwidth •Input/OutputImpedanceMatchedto50Ohms •+39.5dBmOutputPowerat1dBCompression •10.5dBPowerGainat1dBCompression •35PowerAddedEfficiency •-46dBcIM3atPO=28.5dBmSCL •100TestedforDC,RF,andRTH | Excelics Excelics Semiconductor, Inc. | Excelics | ||
4.40-5.00GHz8-WattInternallyMatchedPowerFET FEATURES •4.40–5.00GHzBandwidth •Input/OutputImpedanceMatchedto50Ohms •+39.5dBmOutputPowerat1dBCompression •10.5dBPowerGainat1dBCompression •35PowerAddedEfficiency •-46dBcIM3atPO=28.5dBmSCL •100TestedforDC,RF,andRTH | Excelics Excelics Semiconductor, Inc. | Excelics | ||
C-BandInternallyMatchedFET | EUDYNA Eudyna Devices Inc | EUDYNA | ||
C-BANDPOWERGAASMESFET DESCRIPTION TheNEZC-BandseriesofhighperformancemicrowavepowerGaAsMESFETsprovideshighgainandlowintermodulationdistortionoverstandardanddigitalcommunicationbandsfrom3to8GHz. FEATURES ●INTERNALLYMATCHED(IN/OUT) ●HIGHPout(4W,8W,&15W) ●CLASSAOPERATION | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
C-BANDPOWERGAASMESFET DESCRIPTION TheNEZC-BandseriesofhighperformancemicrowavepowerGaAsMESFETsprovideshighgainandlowintermodulationdistortionoverstandardanddigitalcommunicationbandsfrom3to8GHz. FEATURES ●INTERNALLYMATCHED(IN/OUT) ●HIGHPout(4W,8W,&15W) ●CLASSAOPERATION | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
4W/8WC-BANDPOWERGaAsFETN-CHANNELGaAsMESFET DESCRIPTION TheNEZSeriesofmicrowavepowerGaAsFETsofferhighoutputpower,highgainandhighefficiencyatC-bandformicrowaveandsatellitecommunications.Internalinputandoutputcircuitsmatchedto50Ωare designedtoprovidegoodflatnessofgainandoutputpowerinallocated | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
4W/8WC-BANDPOWERGaAsFETN-CHANNELGaAsMESFET DESCRIPTION TheNEZSeriesofmicrowavepowerGaAsFETsofferhighoutputpower,highgainandhighefficiencyatC-bandformicrowaveandsatellitecommunications.Internalinputandoutputcircuitsmatchedto50Ωare designedtoprovidegoodflatnessofgainandoutputpowerinallocated | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MICROWAVEPOWERGaAsFET | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
HIGHPOWERP1dB=39.5dBmat4.4GHzto5.0GHz | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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