TGHPV100RKE

Package：SOT-227-2；包装：盒 类别：电阻器 底座安装电阻器 描述：SOT-227 600W 100 OHM

TGL-100A

TGLLowProfile1000Base-TSinglePortInterfaceTransformerModules

TGL-100B

TGLLowProfile1000Base-TSinglePortInterfaceTransformerModules

TGL-100C

TGLLowProfile1000Base-TSinglePortInterfaceTransformerModules

TG-P100

Graphene

Applications Consumerelectronics,Set-topboxes,IProuters,ECUs,MemoryandPowermodules Features •Ultrathinandlowmass •Applicableforunventilateddesign •Nodustingissue

TIP100

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

•MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@Vce=4V,Ic=3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP105/106/107

TIP100

NPNSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP105,TIP106andTIP107 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

TIP100

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

TIP100

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

TIP100

POWERTRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP