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FQA30N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FQA30N40

400VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IXFH30N40Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Advantage •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Corporation

IXFT30N40Q

HiPerFETPowerMOSFETsQ-Class

HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Advantage •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Corporation

TGPF30N40P

•400VTrenchTechnology

Features: •400VTrenchTechnology •HighSpeedSwitching •LowConductionLoss •PositiveTemperatureCoefficient •EasyparallelOperation •RoHScompliant •JEDECQualification Applications: PlasmaDisplayPanel,Softswitchingapplication,

TRinno

TRinno Technology Co., Ltd.

TGPF30N40P-L

•400VTrenchTechnology

Features: •400VTrenchTechnology •HighSpeedSwitching •LowConductionLoss •PositiveTemperatureCoefficient •EasyparallelOperation •RoHScompliant •JEDECQualification Applications: PlasmaDisplayPanel,Softswitchingapplication,

TRinno

TRinno Technology Co., Ltd.

TGPF30N40P-R

•400VTrenchTechnology

Features: •400VTrenchTechnology •HighSpeedSwitching •LowConductionLoss •PositiveTemperatureCoefficient •EasyparallelOperation •RoHScompliant •JEDECQualification Applications: PlasmaDisplayPanel,Softswitchingapplication,

TRinno

TRinno Technology Co., Ltd.

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