TGA2575-TS数据手册Qorvo中文资料规格书

描述 Description

Qorvo's TGA2575-TS is a wideband power amplifier fabricated on Qorvo's production-released 0.15 um power pHEMT process. Operating from 32 to 38 GHz, it achieves 35.5 dBm saturated output power, 22% PAE and 19 dB small signal gain over most of the band.
The TGA2575-TS is a 2 mil thick, GaAs die mounted on a 10 mil thick CuMoCu carrier. This provides the customer a known good die attach to assist in thermal management and provide easier handling.
Fully matched to 50 ohms, ROHS compliant and with integrated DC blocking caps on both I/O ports, the TGA2575-TS is ideally suited to support both commercial and defense related opportunities.
The TGA2575-TS is 100% DC and RF tested on-wafer to ensure compliance to performance specifications
Lead-free and RoHS compliant.

特性 Features

• Frequency range: 32.0 to 38.0 GHz
• Power: 35.5 dBm Psat
• PAE: 22%
• Gain: 19 dB
• Return loss: 12 dB
• Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V typical
• Dimensions: 5.31 x 8.92 x .49 mm

应用 Application

• Communication Systems
• Military Radar
• EW Signal Jammers
• Repeaters / Boosters / DAS