TGA2573-2中文资料2 - 18 GHz, 10 Watt GaN Amplifier数据手册Qorvo规格书

描述 Description

Qorvo's TGA2573-2 is a wideband, high power GaN HEMT amplifier fabricated on Qorvo's production 0.25-um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 20% PAE, and 10 dB small signal gain at a drain bias of 30 V.
Fully matched to 50 ohm and with integrated DC blocking caps on both RF ports, the TGA2573-2 is ideally suited to support both commercial and defense related applications.
The TGA2573-2 is 100% DC and RF tested on-wafer to ensure compliance to performance specifications. Lead-free and RoHS compliant.

特性 Features

• Frequency range: 2 to 18 GHz
• PSAT: 40 dBm at VD = 30 V
• PAE: 20% typical
• Small signal gain: 10 dB
• Return loss: 15 dB
• Bias: VD = 30 V, IDQ = 500 mA, VG = 2.3 V typical
• Technology: 0.25-um GaN on SiC
• Dimensions: 2.55 x 5.54 x 0.1 mm

应用 Application

• Communication Systems
• Electronic Countermeasures (ECM)
• Electronic Warfare
• Military Radar
• Test Equipment
• Multi-Band VSAT