2 - 18 GHz, 10 Watt GaN Amplifier

Qorvo's TGA2573-2 is a wideband, high power GaN HEMT amplifier fabricated on Qorvo's production 0.25-um GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 20% PAE, and 10 dB small signal gain at a drain bias of 30 V.\nFully matched to 50 ohm and with integ • Frequency range: 2 to 18 GHz\n• PSAT: 40 dBm at VD = 30 V\n• PAE: 20% typical\n• Small signal gain: 10 dB\n• Return loss: 15 dB\n• Bias: VD = 30 V, IDQ = 500 mA, VG = 2.3 V typical\n• Technology: 0.25-um GaN on SiC\n• Dimensions: 2.55 x 5.54 x 0.1 mm;

Qorvo

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2 - 18 GHz, 10 Watt GaN Amplifier on Carrier

Qorvo's TGA2573-2-TS is a wideband, high power GaN HEMT amplifier fabricated on Qorvo's production 0.25-?m GaN on SiC process. Operating from 2 to 18 GHz, it achieves 40 dBm saturated output power, 20% PAE, and 10 dB small signal gain at a drain bias of 30 V.\nThe TGA2573-2-TS is a 4-mil thick G • Frequency range: 2 to 18 GHz\n• PSAT: 40 dBm at VD = 30 V\n• PAE: 20% typical\n• Small signal gain: 10 dB\n• Return loss: 15 dB\n• Bias: VD = 30 V, IDQ = 500 mA, VG = -2.3 V typical\n• Technology: 0.25-um GaN on SiC\n• Dimensions: 5.66 x 2.67 x 0.5 mm;

Qorvo

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T1/DS1 Output Transformer

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FILTRAN

费尔兰特

裸片

QORVO

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上传：千层芯半导体(深圳)有限公司

原厂封装

QORVO

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上传：深圳市朱博士电子科技有限公司